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?2004 silicon storage technology, inc. s71192-06-000 4/04 1 the sst logo and superflash are registered trademarks of silicon storage technology, inc. these specifications are subject to change without notice. data sheet features: ? single 2.7-3.6v read and write operations serial interface architecture ? spi compatible: mode 0 and mode 3 20 mhz max clock frequency superior reliability ? endurance: 100,000 cycles (typical) ? greater than 100 years data retention low power consumption: ? active read current: 7 ma (typical) ? standby current: 8 a (typical) flexible erase capability ? uniform 4 kbyte sectors ? uniform 32 kbyte overlay blocks fast erase and byte-program: ? chip-erase time: 70 ms (typical) ? sector- or block-erase time: 18 ms (typical) ? byte-program time: 14 s (typical) auto address increment (aai) programming ? decrease total chip programming time over byte-program operations end-of-write detection ? software status hold pin (hold#) ? suspends a serial sequence to the memory without deselecting the device write protection (wp#) ? enables/disables the lock-down function of the status register software write protection ? write protection through block-protection bits in status register packages available ? 8-lead soic (4.9mm x 6mm) ? 8-contact wson product description sst?s serial flash family features a four-wire, spi-compati- ble interface that allows fo r a low pin-count package occu- pying less board space and ultimately lowering total system costs. sst25vf512 spi serial flash memory is manufac- tured with sst?s proprietary, high-performance cmos superflash technology. the split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared wi th alternate approaches. the sst25vf512 device significantly improves perfor- mance, while lowering power consumption. the total energy consumed is a function of the applied voltage, cur- rent, and time of application. since for any given voltage range, the superflash technology uses less current to pro- gram and has a shorter erase time, the total energy con- sumed during any erase or program operation is less than alternative flash memory technologies. the sst25vf512 device operates with a single 2.7-3.6v power supply. the sst25vf512 device is offered in both 8-lead soic and 8-contact wson packages. see figure 1 for the pin assignments. 512 kbit spi serial flash sst25vf512 sst25vf512512kb serial peripheral interface (spi) flash memory
2 data sheet 512 kbit spi serial flash sst25vf512 ?2004 silicon storage technology, inc. s71192-06-000 4/04 1192 b1.5 i/o buffers and data latches superflash memory x - decoder control logic address buffers and latches ce# y - decoder sck si so wp# hold# serial interface f unctional b lock d iagram
data sheet 512 kbit spi serial flash sst25vf512 3 ?2004 silicon storage technology, inc. s71192-06-000 4/04 pin description figure 1: p in a ssignments figure 2: spi p rotocol table 1: p in d escription symbol pin name functions sck serial clock to provide the timing of the serial interface. commands, addresses, or input data are latched on the rising edge of the clock input, while output data is shifted out on the fa lling edge of the clock input. si serial data input to transfer commands, addresses, or data serially into the device. inputs are latched on the rising edge of the serial clock. so serial data output to transfer data serially out of the device. data is shifted out on the falling edge of the serial clock. ce# chip enable the device is enabled by a high to low transition on ce#. ce# must remain low for the duration of any command sequence. wp# write protect the write protect (wp#) pin is used to enable/disable bpl bit in the status register. hold# hold to temporarily stop serial communication wi th spi flash memory without resetting the device. v dd power supply to provide power supply (2.7-3.6v). v ss ground t1.7 1192 1 2 3 4 8 7 6 5 ce# so wp# v ss v dd hold# sck si top view 1192 08-soic p1.4 8- lead soic 8- contact wson 1 2 3 4 8 7 6 5 ce# so wp# v ss top view v dd hold# sck si 1192 08-wson p1a.6 1192 f34.6 mode 3 sck si so ce# mode 3 don't care bit 7 bit 6 bit 5 bit 4 bit 3 bit 2 bit 1 bit 0 bit 7 bit 6 bit 5 bit 4 bit 3 bit 2 bit 1 bit 0 mode 0 mode 0 high impedance msb msb
4 data sheet 512 kbit spi serial flash sst25vf512 ?2004 silicon storage technology, inc. s71192-06-000 4/04 product identification memory organization the sst25vf512 superflash memory array is organized in 4 kbyte sectors with 32 kbyte overlay blocks. device operation the sst25vf512 is accessed through the spi (serial peripheral interface) bus compatible protocol. the spi bus consist of four control lines; chip enable (ce#) is used to select the device, and data is accessed through the serial data input (si), serial data output (so), and serial clock (sck). the sst25vf512 supports both mode 0 (0,0) and mode 3 (1,1) of spi bus operations. the difference between the two modes, as shown in figure 2, is the state of the sck signal when the bus master is in stand-by mode and no data is being transferred. the sck signal is low for mode 0 and sck signal is high for mode 3. for both modes, the serial data in (si) is sampled at the rising edge of the sck clock signal and the serial data output (so) is driven after the falling edge of the sck clock signal. table 2: p roduct i dentification address data manufacturer?s id 00000h bfh device id sst25vf512 00001h 48h t2.5 1192
data sheet 512 kbit spi serial flash sst25vf512 5 ?2004 silicon storage technology, inc. s71192-06-000 4/04 hold operation hold# pin is used to pause a serial sequence underway with the spi flash memory without resetting the clocking sequence. to activate the hold# mode, ce# must be in active low state. the hold# mode begins when the sck active low state coincides with the falling edge of the hold# signal. the hold mode ends when the hold# signal?s rising edge coincides wi th the sck active low state. if the falling edge of the hold# signal does not coincide with the sck active low state, then the device enters hold mode when the sck next reaches the active low state. similarly, if the rising edge of the hold# signal does not coincide with the sck active low state, then the device exits in hold mode when the sck next reaches the active low state. see figure 3 for hold condition waveform. once the device enters hold mode, so will be in high- impedance state while si and sck can be v il or v ih . if ce# is driven active high during a hold condition, it resets the internal logic of the device. as long as hold# signal is low, the memory remains in the hold condition. to resume communication with the device, hold# must be driven active high, and ce# must be driven active low. see figure 17 for hold timing. figure 3: h old c ondition w aveform write protection the sst25vf512 provides software write protection. the write protect pin (wp#) enables or disables the lock-down function of the status regist er. the block-protection bits (bp1, bp0, and bpl) in the status register provide write protection to the memory array and the status register. see table 4 for block-protection description. write protect pin (wp#) the write protect (wp#) pin enables the lock-down func- tion of the bpl bit (bit 7) in the status register. when wp# is driven low, the execution of the write-status-register (wrsr) instruction is determined by the value of the bpl bit (see table 3). when wp# is high, the lock-down func- tion of the bpl bit is disabled. active hold active hold active 1192 f44.0 sck hold# table 3: c onditions to execute w rite -s tatus - r egister (wrsr) i nstruction wp# bpl execute wrsr instruction l 1 not allowed l0allowed hxallowed t3.0 1192
6 data sheet 512 kbit spi serial flash sst25vf512 ?2004 silicon storage technology, inc. s71192-06-000 4/04 status register the software status register provides status on whether the flash memory array is available for any read or write oper- ation, whether the device is write enabled, and the state of the memory write protection. during an internal erase or program operation, the status register may be read only to determine the completion of an operation in progress. table 5 describes the function of each bit in the software status register. busy the busy bit determines whether there is an internal erase or program operation in progress. a ?1? for the busy bit indi- cates the device is busy with an operation in progress. a ?0? indicates the device is ready for the next valid operation. write enable latch (wel) the write-enable-latch bit indicates the status of the inter- nal memory write enable latch. if the write-enable-latch bit is set to ?1?, it indicates the device is write enabled. if the bit is set to ?0? (reset), it indicates the device is not write enabled and does not accept any memory write (program/ erase) commands. the write-enable-latch bit is automati- cally reset under the following conditions: power-up write-disable (wrdi) instruction completion byte-program instruction completion auto address increment (aai) programming reached its highest memory address sector-erase instruction completion block-erase instruction completion chip-erase instruction completion block protection (bp1, bp0) the block-protection (bp1, bp0) bits define the size of the memory area, as defined in table 4, to be software pro- tected against any memory write (program or erase) operations. the write-status-register (wrsr) instruction is used to program the bp1 and bp0 bits as long as wp# is high or the block-protect-lock (bpl) bit is 0. chip-erase can only be executed if block-protection bits are both 0. after power-up, bp1 and bp0 are set to 1. block protection lock-down (bpl) wp# pin driven low (v il ), enables the block-protection- lock-down (bpl) bit. when bpl is set to 1, it prevents any further alteration of the bpl, bp1, and bp0 bits. when the wp# pin is driven high (v ih ), the bpl bit has no effect and its value is ?don?t care?. after power-up, the bpl bit is reset to 0. table 4: s oftware s tatus r egister b lock p rotection 1 1. default at power-up for bp1 and bp0 is ?11?. protection level status register bit protected memory area bp1 bp0 000none 1 (1/4 memory array) 2 2. protection level 1 (1/4 memory array) applies to byte- program, sector-erase, and chip-erase operations. it does not apply to block-erase operations. 0 1 0c000h-0ffffh 2 (1/2 memory array) 1 0 08000h-0ffffh 3 (full memory array) 1 1 00000h-0ffffh t4.5 1192 table 5: s oftware s tatus r egister bit name function default at power-up read/write 0 busy 1 = internal write operation is in progress 0 = no internal write operation is in progress 0r 1 wel 1 = device is memory write enabled 0 = device is not memory write enabled 0r 2 bp0 indicate current level of block write protection (see table 4) 1 r/w 3 bp1 indicate current level of block write protection (see table 4) 1 r/w 4:5 res reserved for future use 0 n/a 6 aai auto address increment programming status 1 = aai programming mode 0 = byte-program mode 0r 7 bpl 1 = bp1, bp0 are read-only bits 0 = bp1, bp0 are read/writable 0r/w t5.0 1192
data sheet 512 kbit spi serial flash sst25vf512 7 ?2004 silicon storage technology, inc. s71192-06-000 4/04 auto address increment (aai) the auto address increment programming-status bit pro- vides status on whether the device is in aai programming mode or byte-program mode. the default at power up is byte-program mode. instructions instructions are used to read, write (erase and program), and configure the sst25vf512. the instruction bus cycles are 8 bits each for commands (op code), data, and addresses. prior to executing any byte-program, auto address increment (aai) programming, sector-erase, block-erase, or chip-erase instructions, the write-enable (wren) instruction must be executed first. the complete list of the instructions is provided in table 6. all instructions are synchronized off a high to low transition of ce#. inputs will be accepted on the rising edge of sck starting with the most significant bit. ce# must be driven low before an instruction is entered and must be driven high after the last bit of the instruction has been shifted in (except for read, read-id and read-status-register instructions). any low to high transition on ce#, before receiving the last bit of an instruction bus cycle, will terminate the instruction in progress and return the device to the standby mode. instruction commands (op code), addresses, and data are all input from the most significant bit (msb) first. table 6: d evice o peration i nstructions 1 1. a ms = most significant address a ms = a 15 for sst25vf512 address bits above the most signi ficant bit of each density can be v il or v ih bus cycle 2 2. one bus cycle is eight clock periods. 123 4 5 cycle type/operation 3,4 3. operation: s in = serial in, s out = serial out 4. x = dummy input cycles (v il or v ih ); - = non-applicable cycles (cycles are not necessary) s in s out s in s out s in s out s in s out s in s out read 03h hi-z a 23 -a 16 hi-z a 15 -a 8 hi-z a 7 -a 0 hi-z x d out sector-erase 5,6 5. sector addresses: use a ms -a 12 , remaining addresses can be v il or v ih 6. prior to any byte-program, aai-program, sector-erase, block-eras e, or chip-erase operation, the write-enable (wren) instructi on must be executed. 20h hi-z a 23 -a 16 hi-z a 15 -a 8 hi-z a 7 -a 0 hi-z - - block-erase 5,7 7. block addresses for: use a ms -a 15 , remaining addresses can be v il or v ih 52h hi-z a 23 -a 16 hi-z a 15 -a 8 hi-z a 7 -a 0 hi-z - - chip-erase 6 60h hi-z - - - - - - - - byte-program 6 02h hi-z a 23 -a 16 hi-z a 15 -a 8 hi-z a 7 -a 0 hi-z d in hi-z auto address increment (aai) program 6,8 8. to continue programming to the next sequential address location, enter the 8-bit command, afh, followed by the data to be programmed. afh hi-z a 23 -a 16 hi-z a 15 -a 8 hi-z a 7 -a 0 hi-z d in hi-z read-status-register (rdsr) 05h hi-z x d out -note 9 9. the read-status-register is continuous with ongoing clock cycles until terminated by a low to high transition on ce#. -note 9 -note 9 enable-write-status-register (ewsr) 10 10. the enable-write-status-register (ewsr) instruction and the writ e-status-register (wrsr) instru ction must work in conjunctio n of each other. the wrsr instruction must be executed immediately (v ery next bus cycle) after the ewsr instruction to make both instructions effective. 50h hi-z - - - - - - - - write-status-register (wrsr) 10 01h hi-z data hi-z - - -. - - - write-enable (wren) 06h hi-z - - - - - - - - write-disable (wrdi) 04h hi-z - - - - - - - - read-id 90h or abh hi-z 00h hi-z 00h hi-z id addr 11 11. manufacturer?s id is read with a 0 =0, and device id is read with a 0 =1. all other address bits are 00h . the manufacturer?s and device id output stream is continuous until term inated by a low to high transition on ce# hi-z x d out 12 12. device id = 48h for sst25vf512 t6.18 1192
8 data sheet 512 kbit spi serial flash sst25vf512 ?2004 silicon storage technology, inc. s71192-06-000 4/04 read the read instruction outputs the data starting from the specified address location. the data output stream is con- tinuous through all addresses until terminated by a low to high transition on ce#. the internal address pointer will automatically increment until the highest memory address is reached. once the highest memory address is reached, the address pointer will auto matically increment to the beginning (wrap-around) of the address space, i.e. for 4 mbit density, once the data from address location 7ffffh had been read, the next output will be from address location 00000h. the read instruction is initiate d by executing an 8-bit com- mand, 03h, followed by address bits [a 23 -a 0 ]. ce# must remain active low for the duration of the read cycle. see figure 4 for the read sequence. figure 4: r ead s equence byte-program the byte-program instruction programs the bits in the selected byte to the desired data. the selected byte must be in the erased state (ffh) when initiating a program operation. a byte-program instruction applied to a pro- tected memory area will be ignored. prior to any write operation, the write-enable (wren) instruction must be executed. ce# must remain active low for the duration of the byte-program instruction. the byte- program instruction is initiated by executing an 8-bit com- mand, 02h, followed by address bits [a 23 -a 0 ]. following the address, the data is input in order from msb (bit 7) to lsb (bit 0). ce# must be driven high before the instruction is executed. the user may poll the busy bit in the software status register or wait t bp for the completion of the internal self-timed byte-program operation. see figure 5 for the byte-program sequence. figure 5: b yte -p rogram s equence 1192 f10.11 ce# so si sck add. 012345678 add. add. 03 high impedance 15 16 23 24 31 32 39 40 70 47 48 55 56 63 64 n+2 n+3 n+4 n n+1 d out msb msb msb mode 0 mode 3 d out d out d out d out 1192 f08.11 ce# so si sck add. 012345678 add. add. d in 02 high impedance 15 16 23 24 31 32 39 mode 0 mode 3 msb msb msb lsb
data sheet 512 kbit spi serial flash sst25vf512 9 ?2004 silicon storage technology, inc. s71192-06-000 4/04 auto address increment (aai) program the aai program instruction allo ws multiple bytes of data to be programmed without re-issuing the next sequential address location. this feature decreases total program- ming time when the entire memory array is to be pro- grammed. an aai program instruction pointing to a protected memory area will be ignored. the selected address range must be in the erased state (ffh) when ini- tiating an aai program instruction. prior to any write operation, the write-enable (wren) instruction must be executed. the aai program instruction is initiated by executing an 8-bit command, afh, followed by address bits [a 23 -a 0 ]. following the addresses, the data is input sequentially from msb (bit 7) to lsb (bit 0). ce# must be driven high before the aai program instruction is executed. the user must poll the busy bit in the software status register or wait t bp for the completion of each inter- nal self-timed byte-program cycle. once the device com- pletes programming byte, the next sequential address may be program, enter the 8-bit command, afh, followed by the data to be programmed. when the last desired byte had been programmed, execute the write-disable (wrdi) instruction, 04h, to terminate aai. after execution of the wrdi command, the user must poll the status register to ensure the device completes programming. see figure 6 for aai programming sequence. there is no wrap mode during aai programming; once the highest unprotected memory address is reached, the device will exit aai operatio n and reset the write-enable- latch bit (wel = 0). figure 6: a uto a ddress i ncrement (aai) p rogram s equence ce# si sck a[23:16] a[15:8] a[7:0] af data byte 1 af data byte 2 ce# si so sck write disable (wrdi) instruction to terminate aai operation read status register (rdsr) instruction to verify end of aai operation 04 last data byte af 05 d out mode 3 mode 0 t bp t bp t bp 1192 f39.10 0 1 2 3 4 5 6 7 8 3233343536373839 15 16 23 24 31 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 01 01234567 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
10 data sheet 512 kbit spi serial flash sst25vf512 ?2004 silicon storage technology, inc. s71192-06-000 4/04 sector-erase the sector-erase instruction clears all bits in the selected 4 kbyte sector to ffh. a sector-erase instruction applied to a protected memory area will be ignored. prior to any write operation, the write-enable (wren) instruction must be executed. ce# must remain active low for the duration of the any command sequence. the sector-erase instruction is initiated by executing an 8-bit command, 20h, followed by address bits [a 23 -a 0 ]. address bits [a ms -a 12 ] (a ms = most significant address) are used to determine the sector address (sa x ), remaining address bits can be v il or v ih. ce# must be driven high before the instruction is exe- cuted. the user may poll the busy bit in the software status register or wait t se for the completion of the internal self- timed sector-erase cycle. see figure 7 for the sector- erase sequence. figure 7: s ector -e rase s equence block-erase the block-erase instruction clears all bits in the selected 32 kbyte block to ffh. a block-erase instruction applied to a protected memory area will be i gnored. prior to any write operation, the write-enable (wren) instruction must be executed. ce# must remain active low for the duration of any command sequence. the block-erase instruction is initiated by executing an 8-bit command, 52h, followed by address bits [a 23 -a 0 ]. address bits [a ms -a 15 ] (a ms = most significant address) are used to determine block address (ba x ), remaining address bits can be v il or v ih . ce# must be driven high before the instruction is executed. the user may poll the busy bit in the software status register or wait t be for the completion of the internal self-timed block- erase cycle. see figure 8 for the block-erase sequence. figure 8: b lock -e rase s equence ce# so si sck add. 012345678 add. add. 20 high impedance 15 16 23 24 31 mode 0 mode 3 1192 f06.12 msb msb ce# so si sck add. 012345678 add. add. 52 high impedance 15 16 23 24 31 mode 0 mode 3 1192 f28.11 msb msb
data sheet 512 kbit spi serial flash sst25vf512 11 ?2004 silicon storage technology, inc. s71192-06-000 4/04 chip-erase the chip-erase instruction clear s all bits in the device to ffh. a chip-erase instruction will be ignored if any of the memory area is protected. prior to any write operation, the write-enable (wren) instruction must be executed. ce# must remain active low for the duration of the chip-erase instruction sequence. the chip-erase instruction is initiated by executing an 8-bit command, 60h. ce# must be driven high before the instruction is executed. the user may poll the busy bit in the software status register or wait t ce for the completion of the internal self-timed chip -erase cycle. see figure 9 for the chip-erase sequence. figure 9: c hip -e rase s equence read-status-register (rdsr) the read-status-register (rdsr) instruction allows read- ing of the status register. the status register may be read at any time even during a write (program/erase) operation. when a write operation is in progress, the busy bit may be checked before sending any new commands to assure that the new commands are properly received by the device. ce# must be driven low before the rdsr instruction is entered and remain low until the status data is read. read- status-register is continu ous with ongoing clock cycles until it is terminated by a low to high transition of the ce#. see figure 10 for the rdsr instruction sequence. figure 10: r ead -s tatus -r egister (rdsr) s equence ce# so si sck 01234567 60 high impedance mode 0 mode 3 1192 f07.12 msb 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 1192 f37.7 mode 3 sck si so ce# bit 7 bit 6 bit 5 bit 4 bit 3 bit 2 bit 1 bit 0 05 mode 0 high impedance status register out msb msb
12 data sheet 512 kbit spi serial flash sst25vf512 ?2004 silicon storage technology, inc. s71192-06-000 4/04 write-enable (wren) the write-enable (wren) instruction sets the write- enable-latch bit to 1 allowing write operations to occur. the wren instruction must be executed prior to any write (program/erase) operation. ce# must be driven high before the wren instruction is executed. figure 11: w rite e nable (wren) s equence write-disable (wrdi) the write-disable (wrdi) instruction resets the write- enable-latch bit and aai bit to 0 disabling any new write operations from occurring. ce# must be driven high before the wrdi instruction is executed. figure 12: w rite d isable (wrdi) s equence enable-write-status-register (ewsr) the enable-write-status-register (ewsr) instruction arms the write-status-register (wrsr) instruction and opens the status register for alteration. the enable-write- status-register instruction does not have any effect and will be wasted, if it is not followed immediately by the write- status-register (wrsr) instruction. ce# must be driven low before the ewsr instruction is entered and must be driven high before the ewsr instruction is executed. ce# so si sck 01234567 06 high impedance mode 0 mode 3 1192 f35.6 msb ce# so si sck 01234567 04 high impedance mode 0 mode 3 1192 f36.6 msb
data sheet 512 kbit spi serial flash sst25vf512 13 ?2004 silicon storage technology, inc. s71192-06-000 4/04 write-status-register (wrsr) the write-status-register instruction works in conjunction with the enable-write-status-register (ewsr) instruction to write new values to the bp1, bp0, and bpl bits of the status register. the write-status-register instruction must be executed immediately after the execution of the enable- write-status-register instruction (very next instruction bus cycle). this two-step instruction sequence of the ewsr instruction followed by the wrsr instruction works like sdp (software data protection) command structure which prevents any accidental alteration of the status register val- ues. the write-status-register instruction will be ignored when wp# is low and bpl bit is set to ?1?. when the wp# is low, the bpl bit can only be set from ?0? to ?1? to lock- down the status register, but cannot be reset from ?1? to ?0?. when wp# is high, the lock-down function of the bpl bit is disabled and the bpl, bp0, and bp1 bits in the status reg- ister can all be changed. as long as bpl bit is set to 0 or wp# pin is driven high (v ih ) prior to the low-to-high transi- tion of the ce# pin at the end of the wrsr instruction, the bp0, bp1, and bpl bit in the status register can all be altered by the wrsr instruction. in this case, a single wrsr instruction can set the bpl bit to ?1? to lock down the status register as well as altering the bp0 and bp1 bit at the same time. see table 3 for a summary description of wp# and bpl functions. ce# must be driven low before the command sequence of the wrsr instruction is entered and driven high before the wrsr instruction is executed. see figure 13 for ewsr and wrsr instruction sequences. figure 13: e nable -w rite -s tatus -r egister (ewsr) and w rite -s tatus -r egister (wrsr) s equence 1192 f38.9 mode 3 high impedance mode 0 status register in 76543210 msb msb msb 01 mode 3 sck si so ce# mode 0 50 0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15
14 data sheet 512 kbit spi serial flash sst25vf512 ?2004 silicon storage technology, inc. s71192-06-000 4/04 read-id the read-id instruction identifies the device as sst25vf512 and manufacturer as sst. the device infor- mation can be read from executing an 8-bit command, 90h or abh, followed by address bits [a 23 -a 0 ]. following the read-id instruction, the manufacturer?s id is located in address 00000h and the device id is located in address 00001h. once the device is in read-id mode, the manu- facturer?s and device id output data toggles between address 00000h and 00001h until terminated by a low to high transition on ce#. figure 14: r ead -id s equence 1192 f19.15 ce# so si sck 00 012345678 00 add 1 90 or ab high impedance 15 16 23 24 31 32 39 40 47 48 55 56 63 bf device id bf device id note: the manufacturer's and device id output stream is continuous until terminated by a low to high transition on ce#. 1. 00h will output the manfacturer's id first and 01h will output device id first before toggling between the two. high impedance mode 3 mode 0 msb msb msb
data sheet 512 kbit spi serial flash sst25vf512 15 ?2004 silicon storage technology, inc. s71192-06-000 4/04 electrical specifications absolute maximum stress ratings (applied conditions greater than t hose listed under ?absolute maximum stress ratings? may cause permanent damage to the device. this is a stress rating only and functional operation of the device at these conditions or conditions greater t han those defined in the operational sections of this data sheet is not implied. exposu re to absolute maximum stress rating co nditions may affect device reliability.) temperature under bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55c to +125c storage temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65c to +150c d. c. voltage on any pin to ground potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0. 5v to v dd +0.5v transient voltage (<20 ns) on any pin to ground potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0v to v dd +2.0v package power dissipation capability (ta = 25c) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0w surface mount lead soldering temperature (3 seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 240c output short circuit current 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 ma 1. output shorted for no more than one second. no more than one output shorted at a time. o perating r ange : range ambient temp v dd commercial 0c to +70c 2.7-3.6v ac c onditions of t est input rise/fall time . . . . . . . . . . . . . . . 5 ns output load . . . . . . . . . . . . . . . . . . . . . c l = 30 pf see figures 19 and 20 table 7: dc o perating c haracteristics v dd = 2.7-3.6v symbol parameter limits test conditions min max units i ddr read current 10 ma ce#=0.1 v dd /0.9 v dd @20 mhz, so=open i ddw program and erase current 30 ma ce#=v dd i sb standby current 15 a ce#=v dd , v in =v dd or v ss i li input leakage current 1 a v in =gnd to v dd , v dd =v dd max i lo output leakage current 1 a v out =gnd to v dd , v dd =v dd max v il input low voltage 0.8 v v dd =v dd min v ih input high voltage 0.7 v dd vv dd =v dd max v ol output low voltage 0.2 v i ol =100 a, v dd =v dd min v oh output high voltage v dd -0.2 v i oh =-100 a, v dd =v dd min t7.9 1192 table 8: r ecommended s ystem p ower - up t imings symbol parameter minimum units t pu-read 1 1. this parameter is measured only for init ial qualification and after a design or proc ess change that could affect this paramet er. v dd min to read operation 10 s t pu-write 1 v dd min to write operation 10 s t8.0 1192 table 9: c apacitance (ta = 25c, f=1 mhz, other pins open) parameter description test condition maximum c out 1 1. this parameter is measured only for init ial qualification and after a design or proc ess change that could affect this paramet er. output pin capacitance v out = 0v 12 pf c in 1 input capacitance v in = 0v 6 pf t9.0 1192
16 data sheet 512 kbit spi serial flash sst25vf512 ?2004 silicon storage technology, inc. s71192-06-000 4/04 table 10: r eliability c haracteristics symbol parameter minimum spec ification units test method n end 1 endurance 10,000 cycles jedec standard a117 t dr 1 data retention 100 years jedec standard a103 i lt h 1 latch up 100 + i dd ma jedec standard 78 t10.1 1192 1. this parameter is measured only for init ial qualification and after a design or proc ess change that could affect this paramet er. table 11: ac o perating c haracteristics v dd = 2.7-3.6v symbol parameter limits min max units f clk serial clock frequency 20 mhz t sckh serial clock high time 20 ns t sckl serial clock low time 20 ns t sckr serial clock rise time 5 ns t sckf serial clock fall time 5 ns t ces 1 1. relative to sck. ce# active setup time 20 ns t ceh 1 ce# active hold time 20 ns t chs 1 ce# not active setup time 10 ns t chh 1 ce# not active hold time 10 ns t cph ce# high time 100 ns t chz ce# high to high-z output 20 ns t clz sck low to low-z output 0 ns t ds data in setup time 5 ns t dh data in hold time 5 ns t hls hold# low setup time 10 ns t hhs hold# high setup time 10 ns t hlh hold# low hold time 15 ns t hhh hold# high hold time 10 ns t hz hold# low to high-z output 20 ns t lz hold# high to low-z output 20 ns t oh output hold from sck change 0 ns t v output valid from sck 20 ns t se sector-erase 25 ms t be block-erase 25 ms t sce chip-erase 100 ms t bp byte-program 20 s t11.15 1192
data sheet 512 kbit spi serial flash sst25vf512 17 ?2004 silicon storage technology, inc. s71192-06-000 4/04 figure 15: s erial i nput t iming d iagram figure 16: s erial o utput t iming d iagram high-z high-z ce# so si sck msb lsb t ds t dh t chh t ces t ceh t chs t sckr t sckf t cph 1192 f41.7 1192 f42.6 ce# si so sck msb t clz t v t sckh t chz t oh t sckl lsb
18 data sheet 512 kbit spi serial flash sst25vf512 ?2004 silicon storage technology, inc. s71192-06-000 4/04 figure 17: h old t iming d iagram figure 18: p ower - up t iming d iagram t hz t lz t hhh t hls t hlh t hhs 1192 f43.1 hold# ce# sck so si time v dd min v dd max v dd device fully accessible t pu-read t pu-write chip selection is not allowed. all commands are rejected by the device. 1192 f45.0
data sheet 512 kbit spi serial flash sst25vf512 19 ?2004 silicon storage technology, inc. s71192-06-000 4/04 figure 19: ac i nput /o utput r eference w aveforms figure 20: a t est l oad e xample 1192 f02.1 reference points output input v ht v lt v ht v lt v iht v ilt ac test inputs are driven at v iht (0.9v dd ) for a logic ?1? and v ilt (0.1v dd ) for a logic ?0?. measurement reference points for inputs and outputs are v ht (0.7v dd ) and v lt (0.3v dd ). input rise and fall times (10% ? 90%) are <5 ns. note: v ht - v high te s t v lt - v low te s t v iht - v input high test v ilt - v input low test 1192 f03.0 to tester to dut c l
20 data sheet 512 kbit spi serial flash sst25vf512 ?2004 silicon storage technology, inc. s71192-06-000 4/04 product ordering information valid combinations for sst25vf512 SST25VF512-20-4C-SA sst25vf512-20-4c-qa SST25VF512-20-4C-SAe sst25vf512-20-4c-qae note: valid combinations are those products in mass producti on or will be in mass production. consult your sst sales representative to confirm availability of valid combinat ions and to determine availability of new combinations. environmental attribute e = non-pb package modifier a = 8 leads or contacts package type s = soic q = wson temperature range c = commercial = 0c to +70c minimum endurance 4 = 10,000 cycles operating frequency 20 = 20 mhz device density 512 = 512 kbit voltag e v = 2.7-3.6v product series 25 = serial peripheral interface flash memory device speed suffix1 suffix2 sst25 v fxxx -xxx -x x -x x x
data sheet 512 kbit spi serial flash sst25vf512 21 ?2004 silicon storage technology, inc. s71192-06-000 4/04 packaging diagrams 8- lead s mall o utline i ntegrated c ircuit (soic) 150 mil body width (4.9 mm x 6 mm ) sst p ackage c ode : sa 08-soic-5x6-sa-8 note: 1. complies with jedec publication 95 ms-012 aa dimensions, although some dimensions may be more stringent. 2. all linear dimensions are in millimeters (max/min). 3. coplanarity: 0.1 mm 4. maximum allowable mold flash is 0.15 mm at the package ends and 0.25 mm between leads. top view side view end view 5.0 4.8 6.20 5.80 4.00 3.80 pin #1 identifier 0.51 0.33 1.27 bsc 0.25 0.10 1.75 1.35 7? 4 places 0.25 0.19 1.27 0.40 45? 7? 4 places 0? 8? 1mm
22 data sheet 512 kbit spi serial flash sst25vf512 ?2004 silicon storage technology, inc. s71192-06-000 4/04 8- contact v ery - very - thin s mall o utline n o - lead (wson) sst p ackage c ode : qa note: 1. all linear dimensions are in millimeters (max/min). 8-wson-6x5-qa-8 4.00 0.10 1.27 bsc pin #1 0.48 0.35 0.076 3.40 0.10 0.25 0.19 5.00 0.10 6.00 0.10 0.05 max 0.70 0.50 0.80 0.70 0.80 0.70 pin #1 corner top view bottom view cross section side view 1mm
data sheet 512 kbit spi serial flash sst25vf512 23 ?2004 silicon storage technology, inc. s71192-06-000 4/04 table 12: r evision h istory number description date 00 initial release may 2001 01 remove cycles 6 & 7 for read and write operations. swapped ready#/busy logic. (1 = busy, 0 = not busy) change wp# description added spi protocol timing diagram. updated all timing diagrams remove all reset# pin description. add hold# description. updated transient voltage parameter. add auto address increment (aai) feature and description. global layout changes. updated all instruction descriptions. jan 2002 02 removed 15h and 1dh commands for read id apr 2002 03 moved the 2 mbit and 4 mbit parts to data sheet s71231 moved the 1 mbit part to data sheet s71233 changed ac timing parameter t ces and t ceh timings to 20 ns ac timing point corrected in figure 19 added rdsr instruction in figure 6 added system power-up timing re-aligned ce# with clk in mode 3 for all figures corrected block address range to a ms -a 15 in ?block-erase? on page 10 apr 2003 04 removed industrial temperature parts updated figures 2, 4 - 14: aligned si waveform with rising edge of clock aug 2003 05 2004 data book dec 2003 06 added footnote 2 to table 4 on page 6 (psn: c0250001) apr 2004 silicon storage technology, inc. 1171 sonora court sunnyvale, ca 94086 telephone 408-735-9110 fax 408-735-9036 www.superflash.com or www.sst.com

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